Spintronics: Beyond Charge Based Electronics
Aligarh Muslim University, Aligarh
It is becoming difficult to sustain Moore’s law far in the future with the existing CMOS technology due to its numerous challenges at the nanoscale. It is, therefore, important to explore alternative technologies to sustain the pace of integration. Most of the Electronics even today is based on the movement of charges which is highly inefficient in terms of power consumption. Spin is also a very fundamental property like charge of carriers but it has been ignored till recently. Spin based devices, which exploit this property for computation and storage, have emerged as a promising technology with a potential to complement CMOS or to replace it altogether in the future. The real Si area overhead of these devices is minimal because they have the same form factor as CMOS and are realized in the interconnect layers by using the existing CMOS foundry infrastructure. The magnetic state (orientation) of these spin devices can be switched (writing operation) with the help of a spin polarized current through spin transfer torque mechanism. These devices can be used for storing information depending upon the direction of their spin orientations. The resistance of these devices is smaller if their spin orientations are parallel compared to a case of antiparallel spins. It is possible to design energy and area efficient circuits by the combination of spintronic devices and CMOS. This talk will cover the fundamental aspect of Spintronics along with the design of logic and memory circuits by the combination of CMOS and Spintronic devices.